收藏本站
W9751G6IB
8. OPERATION MODE
8.1
Command Truth Table
CKE
BA1
A12
A10
A9-A0
COMMAND
Previous
Current
BA0
A11
CS
RAS
CAS
WE
NOTES
Cycle
Cycle
Bank Activate
H
H
BA
Row Address
L
L
H
H
1,2
Single Bank
Precharge
Precharge All
Banks
Write
Write with Auto-
precharge
Read
Read with Auto-
precharge
H
H
H
H
H
H
H
H
H
H
H
H
BA
X
BA
BA
BA
BA
X
X
Column
Column
Column
Column
L
H
L
H
L
H
X
X
Column
Column
Column
Column
L
L
L
L
L
L
L
L
H
H
H
H
H
H
L
L
L
L
L
L
L
L
H
H
1,2
1
1,2,3
1,2,3
1,2,3
1,2,3
(Extended)
Mode Register
H
H
BA
OP Code
L
L
L
L
1,2
Set
No Operation
Device Deselect
Refresh
Self Refresh
Entry
Self Refresh Exit
Power Down
Mode Entry
Power Down
Mode Exit
H
H
H
H
L
H
L
X
X
H
L
H
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
L
L
H
L
H
L
H
L
H
X
L
L
X
H
X
H
X
H
H
X
L
L
X
H
X
H
X
H
H
X
H
H
X
H
X
H
X
H
1
1
1
1,4
1,4,5
1,6
1,6
Notes:
1. All DDR2 SDRAM commands are defined by states of CS , RAS , CAS , WE and CKE at the rising edge of the clock.
2. Bank addresses BA[1:0] determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3. Burst reads or writes at BL = 4 can not be terminated or interrupted. See Burst Interrupt in section 7.5 for details.
4. V REF must be maintained during Self Refresh operation.
5. Self Refresh Exit is asynchronous.
6. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the
refresh requirements outlined in section 7.9.
Publication Release Date: Oct. 23, 2009
- 31 -
Revision A06
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W9751G6KB-25 IC DDR2 SDRAM 512MBIT 84WBGA
W9812G6JH-6I IC SDRAM 128MBIT 54TSOPII
W9816G6IH-6I IC SDRAM 16MBIT 50TSOPII
W9825G6JH-6I IC SDRAM 256MBIT 54TSOPII
W9864G6JH-6I IC SDRAM 64MBIT 54TSOPII
WM-5614 CABINET WALL MOUNT 37.25X17.9"
WRR-2244 RACK WALL MOUNT RELAY 42" X 19"
WRR-2264 RACK WALL MOUNT 75.25" X 19"
相关代理商/技术参数
W9751G6JB 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9751G6JB-25 制造商:Winbond Electronics Corp 功能描述:512GB DDRII
W9751G6JB-3 制造商:Winbond Electronics Corp 功能描述:512MB DDRII
W9751G6KB 制造商:WINBOND 制造商全称:Winbond 功能描述:8M ? 4 BANKS ? 16 BIT DDR2 SDRAM
W9751G6KB-18 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9751G6KB-25 功能描述:IC DDR2 SDRAM 512MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
W9751G6KB25A 制造商:WINBOND 制造商全称:Winbond 功能描述:Double Data Rate architecture: two data transfers per clock cycle
W9751G6KB25I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 512MBIT 2.5NS BGA